Effects of radical-distribution control on etching-profile uniformity in dielectric etching

Uniformity control of etching profile and etching rate across a wafer during damascene etching was investigated using a UHF-ECR etching apparatus with a dual-zone gas-injection system. Uniform etching rate was obtained under various conditions by controlling magnetic field distribution. It was found...

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Bibliographic Details
Published in:Thin solid films 2007-04, Vol.515 (12), p.4937-4940
Main Authors: Kobayashi, Hiroyuki, Yokogawa, Ken'etsu, Maeda, Kenji, Kanekiyo, Tadamitsu, Izawa, Masaru
Format: Article
Language:English
Subjects:
Applied sciences
Damascene
Design. Technologies. Operation analysis. Testing
Dielectrics
Electronics
Etching
Exact sciences and technology
Integrated circuits
Microelectronic fabrication (materials and surfaces technology)
Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices
UHF-ECR plasma
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Summary:Uniformity control of etching profile and etching rate across a wafer during damascene etching was investigated using a UHF-ECR etching apparatus with a dual-zone gas-injection system. Uniform etching rate was obtained under various conditions by controlling magnetic field distribution. It was found that etching profile could be controlled without affecting etching-rate uniformity by changing the ratio of inner- to outer-nitrogen-gas flow rate above the wafer. The effect of feed-gas control on radical distribution was evaluated by simulation and measurement of the radical distribution, which showed that controlling the gas-mixing ratio changed the distribution of the nitrogen-to-CF x ratio. With SiOC via hole etching, nanometer-level bottom-CD uniformity at high etching-rate uniformity was obtained.
ISSN:0040-6090
1879-2731
DOI:10.1016/j.tsf.2006.10.047