Properties of Cu(In,Ga)(S,Se) 2 thin films prepared by selenization/sulfurization of metallic alloys

Single-phase Cu(In,Ga)(S,Se) 2 (CIGSS) thin films have been prepared using a two-step process consisting of annealing of Cu–In–Ga precursors in S/Se ambient. Full characterizations have been carried out using XRD, SEM, EDS, Raman spectroscopy and optical absorption measurements. The depth profiles o...

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Bibliographic Details
Published in:Thin solid films 2007-05, Vol.515 (15), p.5848-5851
Main Authors: Zaretskaya, E.P., Gremenok, V.F., Zalesski, V.B., Bente, K., Schorr, S., Zukotynski, S.
Format: Article
Language:English
Subjects:
Applied sciences
Chalcopyrite
Condensed matter: electronic structure, electrical, magnetic, and optical properties
Cross-disciplinary physics: materials science
rheology
Electronic structure and electrical properties of surfaces, interfaces, thin films and low-dimensional structures
Energy
Exact sciences and technology
Growth monitoring
Materials science
Methods of deposition of films and coatings
film growth and epitaxy
Natural energy
Photovoltaic conversion
Physics
Raman scattering
Solar cells
Solar cells. Photoelectrochemical cells
Solar energy
Surface and interface electron states
Theory and models of film growth
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Summary:Single-phase Cu(In,Ga)(S,Se) 2 (CIGSS) thin films have been prepared using a two-step process consisting of annealing of Cu–In–Ga precursors in S/Se ambient. Full characterizations have been carried out using XRD, SEM, EDS, Raman spectroscopy and optical absorption measurements. The depth profiles of constituent elements Cu, In, Ga, S and Se were almost constant throughout the film. Depending on overall Ga content and recrystallization temperature CIGSS thin films exhibited a shift in band gap from 1.04 to 1.19 eV.
ISSN:0040-6090
1879-2731
DOI:10.1016/j.tsf.2006.12.055