Indium sulfide buffer layers deposited by dry and wet methods

• Published in: Thin solid films 2007-05, Vol.515 (15), p.6041-6044
• Main Authors: Asenjo, B., Sanz, C., Guillén, C., Chaparro, A.M., Gutiérrez, M.T., Herrero, J.
• Format: Article
• Language: English
• Subjects: Buffer layer; Characterization; Condensed matter: structure, mechanical and thermal properties; Cross-disciplinary physics: materials science; rheology; Exact sciences and technology; Indium sulfide; Liquid phase epitaxy; deposition from liquid phases (melts, solutions, and surface layers on liquids); Materials science; Methods of deposition of films and coatings; film growth and epitaxy; Physics; Structure and morphology; thickness; Surfaces and interfaces; thin films and whiskers (structure and nonelectronic properties); Thin film structure and morphology
• ISSN: 0040-6090; 1879-2731
• DOI: 10.1016/j.tsf.2006.12.058

Indium sulfide (In 2S 3) thin films have been deposited on amorphous glass, glass coated by tin oxide (TCO) and crystalline silicon substrates by two different methods: modulated flux deposition (MFD) and chemical bath deposition (CBD). Composition, morphology and optical characterization have been carried out with Scanning Electron Microscopy (SEM), IR-visible-UV Spectrophotometry, X-ray diffraction (XRD) and Fourier transform infrared (FTIR) spectrometer. Different properties of the films have been obtained depending on the preparation techniques. With MFD, In 2S 3 films present more compact and homogeneous surface than with CBD. Films deposited by CBD present also indium oxide in their composition and higher absorption edge values when deposited on glass.