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Phosphorous and boron doping of nc-Si:H thin films deposited on plastic substrates at 150 °C by Hot-Wire Chemical Vapor Deposition
Gas-phase phosphorous and boron doping of hydrogenated nanocrystalline thin films deposited by HWCVD at a substrate temperature of 150 °C on flexible-plastic (polyethylene naphthalate, polyimide) and rigid-glass substrates is reported. The influence of the substrate, hydrogen dilution, dopant concen...
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Published in: | Thin solid films 2008-01, Vol.516 (5), p.576-579 |
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Main Authors: | , , , |
Format: | Article |
Language: | English |
Subjects: | |
Citations: | Items that this one cites Items that cite this one |
Online Access: | Get full text |
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Summary: | Gas-phase phosphorous and boron doping of hydrogenated nanocrystalline thin films deposited by HWCVD at a substrate temperature of 150 °C on flexible-plastic (polyethylene naphthalate, polyimide) and rigid-glass substrates is reported. The influence of the substrate, hydrogen dilution, dopant concentration and film thickness on the structural and electrical properties of the films was investigated. The dark conductivity of B- and P-doped films (
σ
d
=
2.8 S/cm and 4.7 S/cm, respectively) deposited on plastic was found to be somewhat higher than that found in similar films deposited on glass. n- and p-type films with thickness below ∼
50 nm have values of crystalline fraction, activation energy and dark conductivity typical of doped hydrogenated amorphous silicon. This effect is observed both on glass and on plastic substrates. |
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ISSN: | 0040-6090 1879-2731 |
DOI: | 10.1016/j.tsf.2007.06.176 |