AlGaN/GaN HEMTs passivated by Cat-CVD SiN Film

We demonstrate the excellent performance of a 140 W AlGaN/GaN HEMT in the C-band, which is passivated by a Cat-CVD SiN film. The interface trap density of the AlGaN surface passivated by Cat-CVD film after NH 3 treatment is 3 × 10 12 cm − 2 , which is the smallest of investigated deposition techniqu...

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Bibliographic Details
Published in:Thin solid films 2008-01, Vol.516 (5), p.545-547
Main Authors: Oku, Tomoki, Kamo, Yoshitaka, Totsuka, Masahiro
Format: Article
Language:English
Subjects:
AlGaN/GaN HEMT
Applied sciences
Catalytic chemical vapor deposition
Chemical vapor deposition (including plasma-enhanced cvd, mocvd, etc.)
Cross-disciplinary physics: materials science
rheology
Electronics
Exact sciences and technology
Materials science
Methods of deposition of films and coatings
film growth and epitaxy
Physics
Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices
Transistors
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Summary:We demonstrate the excellent performance of a 140 W AlGaN/GaN HEMT in the C-band, which is passivated by a Cat-CVD SiN film. The interface trap density of the AlGaN surface passivated by Cat-CVD film after NH 3 treatment is 3 × 10 12 cm − 2 , which is the smallest of investigated deposition techniques. The lowest interface trap density achieved by the Cat-CVD technique makes it possible to operate the AlGaN/GaN HEMT in the C-band. We clarify that the Cat-CVD technique is necessary for developing future amplifiers.
ISSN:0040-6090
1879-2731
DOI:10.1016/j.tsf.2007.06.223