Pressure dependence and micro-hillock formation of ZnO thin films grown at low temperature by MOCVD

• Published in: Thin solid films 2008-06, Vol.516 (16), p.5562-5566
• Main Authors: Kim, Dong Chan, Kong, Bo Hyun, Jun, Sang Ouk, Cho, Hyung Koun, Park, Dong Jun, Lee, Jeong Yong
• Format: Article
• Language: English
• Subjects: Chemical vapor deposition (including plasma-enhanced cvd, mocvd, etc.); Condensed matter: electronic structure, electrical, magnetic, and optical properties; Condensed matter: structure, mechanical and thermal properties; Cross-disciplinary physics: materials science; rheology; Diffusion; interface formation; Exact sciences and technology; Low temperature; Materials science; Methods of deposition of films and coatings; film growth and epitaxy; Micro-hillock; MOCVD; Optical properties and condensed-matter spectroscopy and other interactions of matter with particles and radiation; Optical properties of specific thin films; Physics; Solid surfaces and solid-solid interfaces; Surfaces and interfaces; thin films and whiskers (structure and nonelectronic properties); Theory and models of film growth; ZnO
• ISSN: 0040-6090; 1879-2731
• DOI: 10.1016/j.tsf.2007.07.123

ZnO thin films were grown at a reduced growth temperature on a Si substrate by low-pressure metalorganic chemical vapor deposition. The effects of the reactor pressures and the formation of micro-hillocks on the characteristics of the film were investigated. The ZnO films grown at 210 °C showed mass-transport limited growth behavior and a faceted surface morphology. It was found that the effect of the micro-hillocks on the structural, optical, and electrical properties can be ignored. While the sample grown at 10 Torr showed transparent conductive oxide properties, the sample grown at 3 Torr showed suitable characteristics for use as an ultraviolet emitter.