Nitridation and oxynitridation of Si to control interfacial reaction with HfO2

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Bibliographic Details
Published in:Thin solid films 2008-10, Vol.516 (23), p.8498-8506
Main Authors: KATAMREDDY, Rajesh, INMAN, Ronald, JURSICH, Gregory, SOULET, Axel, TAKOUDIS, Christos
Format: Article
Language:English
Subjects:
Chemical vapor deposition (including plasma-enhanced cvd, mocvd, etc.)
Cross-disciplinary physics: materials science
rheology
Exact sciences and technology
Materials science
Methods of deposition of films and coatings
film growth and epitaxy
Physics
Vapor phase epitaxy
growth from vapor phase
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ISSN:0040-6090
1879-2731
DOI:10.1016/j.tsf.2008.05.002