Investigations of hydrogen sensors made of porous silicon

• Published in: Thin solid films 2008-11, Vol.517 (1), p.239-241
• Main Authors: Galstyan, V.E., Martirosyan, Kh.S., Aroutiounian, V.M., Arakelyan, V.M., Arakelyan, A.H., Soukiassian, P.G.
• Format: Article
• Language: English
• Subjects: Cross-disciplinary physics: materials science; rheology; Deposition by sputtering; Exact sciences and technology; General equipment and techniques; Hydrogen sensor; Instruments, apparatus, components and techniques common to several branches of physics and astronomy; Ion and electron beam-assisted deposition; ion plating; Materials science; Methods of deposition of films and coatings; film growth and epitaxy; Physics; Porous silicon; Sensors (chemical, optical, electrical, movement, gas, etc.); remote sensing; Vapor phase epitaxy; growth from vapor phase
• ISSN: 0040-6090; 1879-2731
• DOI: 10.1016/j.tsf.2008.08.010

Porous silicon layer was formed by electrochemical anodization on n- and p-type silicon surface. Thereafter n-type TiO 1.98 and ZnO〈Al〉 thin films were deposited onto porous silicon surface by electron-beam evaporation and magnetron sputtering, respectively. A Pt catalytic layer and Au electrical contacts for further electrical measurements were deposited by ion-beam sputtering. Changes in sensitivity versus time of obtained structures were examined for different concentrations of hydrogen gas and propane–butane mixture. High sensitivity and selectivity to hydrogen gas was detected. All measurements were carried out at 40 °C.