High-quality epitaxial Si growth at low temperatures by atmospheric pressure plasma CVD

• Published in: Thin solid films 2008-11, Vol.517 (1), p.242-244
• Main Authors: Yasutake, K., Ohmi, H., Kirihata, Y., Kakiuchi, H.
• Format: Article
• Language: English
• Subjects: Atmospheric pressure plasma; Chemical vapor deposition; Chemical vapor deposition (including plasma-enhanced cvd, mocvd, etc.); Cross-disciplinary physics: materials science; rheology; Epitaxy; Exact sciences and technology; Generation lifetime; Ion and electron beam-assisted deposition; ion plating; Materials science; Methods of deposition of films and coatings; film growth and epitaxy; Physics; Physics of gases, plasmas and electric discharges; Physics of plasmas and electric discharges; Plasma applications; Plasma processing and deposition; Plasma-based ion implantation and deposition; Silicon; Theory and models of film growth
• ISSN: 0040-6090; 1879-2731
• DOI: 10.1016/j.tsf.2008.08.016

We have studied the epitaxial Si growth on 4-inch-(001) Si wafers by atmospheric pressure plasma chemical vapor deposition (AP-PCVD) using a porous-carbon electrode. Defect-free growth of epitaxial Si is confirmed in the temperature range 470–570 °C by transmission electron microscopy. High minority carrier generation lifetime (2.0 ms) is observed in the Si film grown at 570 °C with a rate of 0.35 μm/min. In situ H 2 AP-plasma cleaning of the substrate surface is effective for eliminating O and C concentration peaks at the film/substrate interface. Effects of plasma heating and ion bombardment of the growing-film surface have been discussed.