The copper influence on the PL spectra of CdTe thin film as a component of the CdS/CdTe heterojunction

The influence of annealing in the presence of CdCl 2 and a thin copper layer deposited onto CdTe on the photoluminescence spectra of CdTe, as a component of CdS/CdTe heterojunction, has been studied for two excitation wavelengths: 0.337 μm and 0.6328 μm. The behavior of the PL was studied as a funct...

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Bibliographic Details
Published in:Thin solid films 2009-02, Vol.517 (7), p.2195-2201
Main Authors: Vatavu, Sergiu, Zhao, Hehong, Caraman, Iuliana, Gaşin, Petru, Ferekides, Chris
Format: Article
Language:English
Subjects:
CdS
CdTe
Heterojunction
Photoluminescence (PL)
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Summary:The influence of annealing in the presence of CdCl 2 and a thin copper layer deposited onto CdTe on the photoluminescence spectra of CdTe, as a component of CdS/CdTe heterojunction, has been studied for two excitation wavelengths: 0.337 μm and 0.6328 μm. The behavior of the PL was studied as a function of the measurement temperature and excitation intensity. At 0.6328 μm excitation, the interface PL consists of a known 1.43X band, and the chloride annealing enhances radiative transitions at 1.536 eV. The intensity of the 1.536 eV transitions increases when Cu is present. The PL of as-deposited CdTe films prepared in the presence of oxygen has the 1.45X band attenuated when excited with 0.337 μm excitation wavelength.
ISSN:0040-6090
1879-2731
DOI:10.1016/j.tsf.2008.10.087