Composition depth profile analysis of bulk heterojunction layer by time-of-flight secondary ion mass spectrometry with gradient shaving preparation

• Published in: Thin solid films 2010-02, Vol.518 (8), p.2115-2118
• Main Authors: Yamamoto, Shuhei, Kitazawa, Daisuke, Tsukamoto, Jun, Shibamori, Takahiro, Seki, Hirofumi, Nakagawa, Yoshitsugu
• Format: Article
• Language: English
• Subjects: Applied sciences; Bulk heterojunction; Composition and phase identification; Condensed matter: structure, mechanical and thermal properties; Defects and impurities: doping, implantation, distribution, concentration, etc; Depth profile; Energy; Exact sciences and technology; Natural energy; Organic solar cells; Photovoltaic conversion; Physics; Solar cells. Photoelectrochemical cells; Solar energy; Spectrometry; Surfaces and interfaces; thin films and whiskers (structure and nonelectronic properties); Thin film structure and morphology; Time-of-flight secondary ion mass
• ISSN: 0040-6090; 1879-2731
• DOI: 10.1016/j.tsf.2009.07.121

Composition depth profile analysis of bulk heterojunction (BHJ) layer was performed by time-of-flight secondary ion mass spectrometry with gradient shaving preparation. The BHJ layer comprised of poly(3-hexylthiophene) (P3HT) and [6,6]-phenyl-C61butyric acid methyl ester (PCBM) was formed on the substrate coated with poly(3,4-ethylenedioxythiophene):poly(styrenesulfonate) (PEDOT:PSS) followed by annealing. The P3HT component increased toward the top surface in the BHJ layer. In addition, C 8H 7SO 3 − was detected inside the BHJ layer, suggesting penetration of PSS. P3HT was uniformly distributed in the BHJ layer without PEDOT:PSS. The P3HT-rich distribution in the top surface may be attributed to PSS penetration.