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Interaction of point defects with impurities in the Si-SiO2 system and its influence on the properties of the interface

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Bibliographic Details
Published in:	Thin solid films 2010-02, Vol.518 (9), p.2374-2376
Main Authors:	KROPMAN, D, MELLIKOV, E, REBOHLE, L, ZVYAGIN, S, CIZMAR, E, OZEROV, M, WOSNITZA, J, ÖPIK, A, LOTT, K, KÄRNER, T, HEINMAA, I, LAAS, T, MEDVID, A, SKORUPA, W, PRUCNAL, S
Format:	Article
Language:	English
Subjects:	Condensed matter: electronic structure, electrical, magnetic, and optical properties Condensed matter: structure, mechanical and thermal properties Defects and impurities in crystals microstructure Defects and impurities: doping, implantation, distribution, concentration, etc Electronic structure and electrical properties of surfaces, interfaces, thin films and low-dimensional structures Exact sciences and technology Physics Point defects (vacancies, interstitials, color centers, etc.) and defect clusters Structure of solids and liquids crystallography Surface and interface electron states Surface states, band structure, electron density of states Surfaces and interfaces thin films and whiskers (structure and nonelectronic properties) Thin film structure and morphology
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