Characteristics of laser-annealed ZnO thin film transistors

We investigated the effects of laser annealing on ZnO thin film transistors (TFTs). ZnO layers were deposited on a bottom-gate patterned Si substrate by radio-frequency sputtering at room temperature. Laser annealing of the ZnO films reduced the full width at half maximum of the ZnO (002) diffractio...

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Bibliographic Details
Published in:Thin solid films 2010-03, Vol.518 (11), p.3022-3025
Main Authors: Kim, Jun-Je, Bak, Jun-Yong, Lee, Jong-Hoon, Kim, Hong Seung, Jang, Nak-Won, Yun, Young, Lee, Won-Jae
Format: Article
Language:English
Subjects:
Bottom gate
Laser annealing
ZnO-TFT
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Summary:We investigated the effects of laser annealing on ZnO thin film transistors (TFTs). ZnO layers were deposited on a bottom-gate patterned Si substrate by radio-frequency sputtering at room temperature. Laser annealing of the ZnO films reduced the full width at half maximum of the ZnO (002) diffraction peak from 0.49° to 0.1°. It reveals that the crystalline quality is improved by annealing effect. A SiO 2 formed in low temperature was used as the gate dielectric. Unannealed ZnO-TFTs were operated in enhancement mode with a threshold voltage of 21.6 V. They had a field-effect mobility of 0.004 cm 2/Vs and an on/off current ratio of 134. Laser annealing of the ZnO-TFTs by 200 laser pulses reduced their threshold voltage to 0.6 V and increased their field-effect mobility to 5.08 cm 2/Vs. The increase of mobility is originated from the crystallization enhancement of ZnO films after laser annealing.
ISSN:0040-6090
1879-2731
DOI:10.1016/j.tsf.2009.09.190