Electroless deposition of bismuth on Si(111) wafer from hydrogen fluoride solutions

• Published in: Thin solid films 2010-05, Vol.518 (14), p.3690-3693
• Main Authors: Romann, T., Anderson, E., Kallip, S., Mändar, H., Matisen, L., Lust, E.
• Format: Article
• Language: English
• Subjects: Atomic Force Microscopy; Bismuth nanoparticles; Condensed matter: electronic structure, electrical, magnetic, and optical properties; Condensed matter: structure, mechanical and thermal properties; Cross-disciplinary physics: materials science; rheology; Electrical properties of specific thin films; Electroless deposition; Electronic structure and electrical properties of surfaces, interfaces, thin films and low-dimensional structures; Exact sciences and technology; Materials science; Nanoscale materials and structures: fabrication and characterization; Optical properties and condensed-matter spectroscopy and other interactions of matter with particles and radiation; Other topics in nanoscale materials and structures; Photoluminescence; Physics; Porous silicon; Structure and morphology; thickness; Surfaces and interfaces; thin films and whiskers (structure and nonelectronic properties); Thin film structure and morphology; Thin films; X-ray diffraction; X-ray Photoelectron Spectroscopy
• ISSN: 0040-6090; 1879-2731
• DOI: 10.1016/j.tsf.2009.10.007

Thin Bi layers were deposited by simple immersion of silicon chip into diluted HF aqueous solution, containing bismuth(III) ions. Bi nanoparticles or continuous up to 300 nm thick Bi film can be grown on silicon by the variation of the temperature and deposition time. Prepared surfaces have been characterized by atomic force microscopy, X-ray diffraction, X-ray photoelectron spectroscopy, Raman scattering, photoluminescence and resistivity measurement methods. It was found that thinner Bi layers have a yellowish colour.