Extended study of the step-bunching mechanism during the homoepitaxial growth of SiC

We discuss the possible source of surface instabilities (with specific reference to the step bunching phenomena) during the growth of cubic and hexagonal Silicon Carbide polytypes. For this analysis we use: results from super-lattice Kinetic Monte Carlo simulations, atomic force microscope surface a...

Full description

Saved in:
Bibliographic Details
Published in:Thin solid films 2010, Vol.518 (6), p.S159-S161
Main Authors: Camarda, M., La Magna, A., Severino, A., La Via, F.
Format: Article
Language:English
Subjects:
Condensed matter: structure, mechanical and thermal properties
Cross-disciplinary physics: materials science
rheology
Exact sciences and technology
Materials science
Methods of deposition of films and coatings
film growth and epitaxy
Physics
Step bunching
Step controlled epitaxy
Structure and morphology
thickness
Surface morphologies
Surfaces and interfaces
thin films and whiskers (structure and nonelectronic properties)
Theory and models of film growth
Thin film structure and morphology
Citations: Items that this one cites
Items that cite this one
Online Access:Get full text
Tags: Add Tag
No Tags, Be the first to tag this record!
Description
Summary:We discuss the possible source of surface instabilities (with specific reference to the step bunching phenomena) during the growth of cubic and hexagonal Silicon Carbide polytypes. For this analysis we use: results from super-lattice Kinetic Monte Carlo simulations, atomic force microscope surface analysis and literature data. We show that only hexagonal polytypes with misorientation cut toward the direction suffer “intrinsically” the step bunching phenomena (i.e. it is present, independently on the growth conditions) whereas cubic polytypes and hexagonal ones with misorientation cut toward the direction do not.
ISSN:0040-6090
1879-2731
DOI:10.1016/j.tsf.2009.10.078