Hole transport properties of p-type polycrystalline ZnO film using a dual-acceptor doping method with lithium and nitrogen

• Published in: Thin solid films 2010-04, Vol.518 (12), p.3428-3431
• Main Authors: Wang, X.H., Yao, B., Cong, C.X., Wei, Z.P., Shen, D.Z., Zhang, Z.Z., Li, B.H., Lu, Y.M., Zhao, D.X., Zhang, J.Y., Fan, X.W.
• Format: Article
• Language: English
• Subjects: Condensed matter: electronic structure, electrical, magnetic, and optical properties; Condensed matter: structure, mechanical and thermal properties; Electronic structure and electrical properties of surfaces, interfaces, thin films and low-dimensional structures; Electronic transport phenomena in thin films and low-dimensional structures; Exact sciences and technology; Hall-effect measurement; P-type ZnO; Physics; Polycrystalline film; Structure and morphology; thickness; Surfaces and interfaces; thin films and whiskers (structure and nonelectronic properties); Thin film structure and morphology; Transport properties
• ISSN: 0040-6090; 1879-2731
• DOI: 10.1016/j.tsf.2009.12.007

Hole transport properties of p-type polycrystalline ZnO film using a dual-acceptor doping method with lithium and nitrogen (denoted as ZnO:(Li, N)) were investigated by the temperature-dependent Hall-effect measurements. The hole mobility of the ZnO:(Li, N) firstly increases with increasing temperature from 85 to 140 K, and then decreases from 140 to 300 K. The comparison of experimental results and theoretical models shows that the mobility at temperature below 140 K is mainly affected by the grain boundary scattering, whereas the hole mobility above 140 K is dominated by mixed scatterings, involving lattice vibration, dislocation, and ionized impurity.