Effects of a a-Si:H layer on reducing the dark current of 1310 nm metal―germanium―metal photodetectors

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Bibliographic Details
Published in:Thin solid films 2011-03, Vol.519 (11), p.3819-3821
Main Authors: HWANG, J. D, ZHANG, E. H
Format: Article
Language:English
Subjects:
Applied sciences
Condensed matter: electronic structure, electrical, magnetic, and optical properties
Electronic structure and electrical properties of surfaces, interfaces, thin films and low-dimensional structures
Electronic transport phenomena in thin films and low-dimensional structures
Electronics
Exact sciences and technology
Optoelectronic devices
Photoconduction and photovoltaic effects
photodielectric effects
Physics
Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices
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ISSN:0040-6090
1879-2731
DOI:10.1016/j.tsf.2011.01.232