Low-resistivity Cu film electrodeposited with 3- N,N-dimethylaminodithiocarbamoyl-1-propanesulfonate for the application to the interconnection of electronic devices

• Published in: Thin solid films 2012, Vol.520 (6), p.2136-2141
• Main Authors: Cho, Sung Ki, Kim, Myung Jun, Koo, Hyo-Chol, Kwon, Oh Joong, Kim, Jae Jeong
• Format: Article
• Language: English
• Subjects: 3- N,N-dimethylaminodithiocarbamoyl-1-propanesulfonate; Condensed matter: electronic structure, electrical, magnetic, and optical properties; Condensed matter: structure, mechanical and thermal properties; Cross-disciplinary physics: materials science; rheology; Cu electrodeposition; Cu resistivity; Electrical properties of specific thin films; Electrodeposition, electroplating; Electron states; Electronic structure and electrical properties of surfaces, interfaces, thin films and low-dimensional structures; Exact sciences and technology; Impurity and defect levels; Interconnection; Materials science; Methods of deposition of films and coatings; film growth and epitaxy; Physics; Structure and morphology; thickness; Surfaces and interfaces; thin films and whiskers (structure and nonelectronic properties); Thin film structure and morphology
• ISSN: 0040-6090; 1879-2731
• DOI: 10.1016/j.tsf.2011.09.015

In this study, we analyzed the properties of Cu films electrodeposited with 3- N,N-dimethylaminodithiocarbamoyl-1-propanesulfonate (DPS) as an organic additive in damascene Cu electrodeposition, in comparison with bis(sulfopropyl) disulfide (SPS). It was observed that the resistivity of Cu film electrodeposited with DPS was lower than that with SPS. Spectroscopic analyses showed that the impurity level and crystallinity of Cu films are almost the same, but the difference was found in the film roughness. Low roughness of Cu film electrodeposited with DPS led to the low resistivity, and it was speculated that the low roughness is related to the strong adsorption through the nitrogen atom in the DPS molecule.