Thickness dependence of the amorphous-cubic and cubic-hexagonal phase transition temperatures of GeSbTe thin films on silicon nitride

The crystallization temperature of GeSbTe thin films with thicknesses between 11 and 87nm on silicon nitride was studied through resistance versus temperature measurements. The amorphous-cubic phase transition occurs at ~150°C for all films thicknesses, whereas the cubic-hexagonal phase transition t...

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Bibliographic Details
Published in:Thin solid films 2012-01, Vol.520 (7), p.2976-2978
Main Authors: Peng, H.K., Cil, K., Gokirmak, A., Bakan, G., Zhu, Y., Lai, C.S., Lam, C.H., Silva, H.
Format: Article
Language:English
Subjects:
Condensed matter: structure, mechanical and thermal properties
Exact sciences and technology
GeSbTe
Instruments, apparatus, components and techniques common to several branches of physics and astronomy
Phase transition temperature
Phase-change memory
Physics
Structure and morphology
thickness
Surfaces and interfaces
thin films and whiskers (structure and nonelectronic properties)
Thermal instruments, apparatus and techniques
Thermometry
Thickness dependence
Thin film structure and morphology
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Summary:The crystallization temperature of GeSbTe thin films with thicknesses between 11 and 87nm on silicon nitride was studied through resistance versus temperature measurements. The amorphous-cubic phase transition occurs at ~150°C for all films thicknesses, whereas the cubic-hexagonal phase transition temperature increases with film thickness, from ~200°C for the 20nm film to ~250°C for the 87nm film. The cubic-hexagonal transition occurs gradually for the 11nm film. Implications for phase-change memory devices are discussed.
ISSN:0040-6090
1879-2731
DOI:10.1016/j.tsf.2011.11.033