Dependence of catalytic properties of indium-implanted SiO2 thin films on the energy and dose of incident indium ions

• Published in: Thin solid films 2012-05, Vol.520 (15), p.4894-4897
• Main Authors: Yoshimura, S., Kiuchi, M., Nishimoto, Y., Yasuda, M., Baba, A., Hamaguchi, S.
• Format: Article
• Language: English
• Subjects: Catalysis; Catalyst; Catalysts: preparations and properties; Chemistry; Condensed matter: structure, mechanical and thermal properties; Defects and impurities in crystals; microstructure; Doping and impurity implantation in other materials; Exact sciences and technology; General and physical chemistry; Indium; Ion beam injection; Ion energy; Physics; SiO2 thin film; Structure of solids and liquids; crystallography; Theory of reactions, general kinetics. Catalysis. Nomenclature, chemical documentation, computer chemistry
• ISSN: 0040-6090; 1879-2731
• DOI: 10.1016/j.tsf.2012.03.028

Chemical substances that contain indium (In) and silicon (Si) in close proximity are known to catalyze certain organic chemical reactions. The previous study [S. Yoshimura, et al., Appl. Surf. Sci., 257 (2010) 192] has demonstrated that In implanted SiO2 thin films, formed under some specific conditions, contain In atoms on or near the substrate surface in close proximity with Si atoms and catalyze a reaction of benzhydrol with acetylacetone. In this study, dependence of the catalytic ability of an In implanted SiO2 thin film on the ion incident energy and dose for the In ion implantation process has been examined. It has been shown that a right combination of ion energy and ion dose must be selected in the film preparation process for the manifestation of the catalytic effect. ► Indium implanted SiO2 thin film formed by ion beam injection catalyzes a reaction. ► Dependence of catalytic properties on incident energy and dose is investigated. ► There is an optimal ion energy and ion dose in the film preparation process.