The effect of growth temperature on the coaxial InxGa1−xN/GaN nanowires grown by metalorganic chemical vapor deposition

• Published in: Thin solid films 2012-09, Vol.520 (23), p.6975-6979
• Main Authors: Park, Ji-Hyeon, Navamathavan, R., Ra, Yong-Ho, Yeom, Bo-Ra, Sim, Jae-Kwan, Ahn, Haeng-Kwun, Lee, Cheul-Ro
• Format: Article
• Language: English
• Subjects: Chemical vapor deposition (including plasma-enhanced cvd, mocvd, etc.); Cross-disciplinary physics: materials science; rheology; Exact sciences and technology; Gallium compounds; Materials science; Methods of deposition of films and coatings; film growth and epitaxy; Methods of nanofabrication; MOCVD; Nanostructures; Nanowires; Other semiconductors; Physics; Semiconducting III–V materials; Specific materials; Theory and models of film growth
• ISSN: 0040-6090; 1879-2731
• DOI: 10.1016/j.tsf.2012.06.009

We report on the growth of coaxial InxGa1−xN/GaN nanowires (NWs) on Si(111) substrates by using pulsed flow metalorganic chemical vapor deposition. The coaxial InxGa1−xN/GaN NWs were grown by a two step process in which the core (GaN) structure was grown at a higher temperature followed by the shell (InxGa1−xN) structure at a lower temperature. Dense and well-oriented coaxial InxGa1−xN/GaN NWs were grown with an average diameter and length of about 300±50nm and 1.5–2.0μm, respectively. The coaxial InxGa1−xN/GaN NW was confirmed by cathodoluminescence mapping and high-resolution transmission electron microscopy. It is proposed that the critical dissociation of precursors at an elevated growth temperature can lead to a clear formation of an outer-shell in coaxial InxGa1−xN/GaN NWs. ► Coaxial InxGa1−xN/GaN nanowires (NWs) were grown on Si(111) substrates. ► Two step growth procedures were adopted to grow core and shell structures. ► A very smooth surface morphology of InxGa1−xN/GaN NWs was obtained. ► Dissociation of precursors at an elevated temperature forms the uniform coaxial NWs.