Analytic representation of the dielectric functions of InAsxSb1−x alloys in the parametric model

• Published in: Thin solid films 2013-11, Vol.547, p.276-279
• Main Authors: Hwang, S.Y., Kim, T.J., Byun, J.S., Barange, N.S., Diware, M.S., Kim, Y.D., Aspnes, D.E., Yoon, J.J., Song, J.D.
• Format: Article
• Language: English
• Subjects: Applied sciences; Dielectric function; Electronics; Ellipsometry; Exact sciences and technology; InAsSb alloy; Instruments, apparatus, components and techniques common to several branches of physics and astronomy; Optical instruments, equipment and techniques; Optoelectronic devices; Parametric model; Physics; Polarimeters and ellipsometers; Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices
• ISSN: 0040-6090; 1879-2731
• DOI: 10.1016/j.tsf.2012.11.088

We report expressions that allow the dielectric functions ε=ε1+iε2 from 1.5 to 6.0eV of InAsxSb1−x alloys over the entire composition range 0≤x≤1 to be calculated analytically. We base our work on the parametric model (PM), which describes the dielectric functions of semiconductor materials as a sum of Gaussian-broadened polynomials. Our reference ε spectra are those that we obtained previously by spectroscopic ellipsometry for the specific compositions x=0.000, 0.127, 0.337, 0.491, 0.726, and 1.000. The PM reconstructions are in excellent agreement with the data, and with the interpolations provided here, the model is extended to arbitrary compositions. We expect these results to be useful in a number of contexts, for example for the design of optoelectronic devices. ► We report the dielectric functions of InAsxSb1−x alloys. ► We base our work on the parametric model. ► The parametric model reconstructions are in excellent agreement with the data. ► We can express the dielectric functions over the entire composition range.