Sn doped GaSb grown by liquid phase epitaxy

• Published in: Thin solid films 2013-12, Vol.548, p.168-170
• Main Authors: Compeán-Jasso, V.H., de Anda, F., Mishurnyi, V.A., Gorbatchev, A.Yu, Prutskij, T., Kudriavtsev, Yu
• Format: Article
• Language: English
• Subjects: Condensed matter: electronic structure, electrical, magnetic, and optical properties; Cross-disciplinary physics: materials science; rheology; Doping; Exact sciences and technology; Gallium antimony; Liquid phase epitaxy; Liquid phase epitaxy; deposition from liquid phases (melts, solutions, and surface layers on liquids); Materials science; Methods of deposition of films and coatings; film growth and epitaxy; Optical properties and condensed-matter spectroscopy and other interactions of matter with particles and radiation; Other semiconductors; Photoluminescence; Physics; Specific materials; Theory and models of film growth; Tin
• ISSN: 0040-6090; 1879-2731
• DOI: 10.1016/j.tsf.2013.09.052

Sn doped GaSb has been grown at 260°C by liquid phase epitaxy. The experiments were done so as to determine if Sn could change its impurity type, from acceptor to donor, at such low growth temperature. It was found that Sn behaves as an acceptor irrespective of the growth temperature or the Sn concentration in the nutrient liquid. The samples were studied by photoluminescence and secondary ion mass spectroscopy. From these experiments the segregation coefficient of Sn in the Ga–Sb–Sn system at 260°C has been measured. Also the activation energy of the Sn acceptor level was determined at 20K. •Sn is not an amphoteric impurity in GaSb grown by liquid phase epitaxy.•A photoluminescence emission peak is attributed to Sn acceptors in GaSb.•Sn behaves as an acceptor in GaSb even at growth temperatures of 260°C.