Ne–He bubble formation in co-implanted Si(111) substrates

• Published in: Thin solid films 2013-12, Vol.548, p.465-469
• Main Authors: Matos, L.G., dos Reis, R.M.S., Maltez, R.L.
• Format: Article
• Language: English
• Subjects: Condensed matter: structure, mechanical and thermal properties; Defects and impurities in crystals; microstructure; Doping and impurity implantation in other materials; Exact sciences and technology; He ion implantation; Hybrid bubble system; Ne ion implantation; Physics; Rutherford backscattering spectrometry/channeling; Silicon substrate; Structure and morphology; thickness; Structure of solids and liquids; crystallography; Surfaces and interfaces; thin films and whiskers (structure and nonelectronic properties); Thin film structure and morphology; Transmission electron microscopy
• ISSN: 0040-6090; 1879-2731
• DOI: 10.1016/j.tsf.2013.09.076

We have studied Si(111) substrates co-implanted with Ne and He, and also separately implanted with these ions, as a function of the annealing temperature. Ne implantations were performed up to fluences of 1×1015 and 5×1015cm−2 while keeping the substrate at 350°C temperature. He implantations were performed at room temperature up to fluences of 5×1015 and 1×1016cm−2. The co-implanted samples were first implanted by Ne and then by He ions. These samples were submitted to rapid thermal annealing with temperatures ranging from 350 to 1000°C. Rutherford backscattering spectrometry/channeling measurements have demonstrated temperature dependent beam dechanneling starting at the implanted ion region. The co-implanted system with 1×1015Ne/cm2 and 1×1016He/cm2 shows an improved dechanneling stability in the range of 400–800°C. Transmission electron microscopy has demonstrated a bubble morphology of Ne–He similar to the sample implanted only with Ne, even for a Ne:He co-implantation ratio of 1:10. We have concluded that the observed dechanneling is mainly due to Ne residual implantation damage and that the annealing behavior of such systems is very different from the He implanted samples. •We investigated Si(111) narrowly implanted (150nm) with Ne, He and mixture of both.•Only (1×1015cm−2 Ne & 1×1016cm−2 He) set showed some He like thermal behavior.•Hybrid bubble morphology is very alike to Ne bubbles even for ratio 1Ne:10He.•Hybrid bubble morphology does not recall any similarity to the He system.•Residual implantation damage makes role on the hybrid system.