Process dependence of the piezoelectric response of membrane actuators based on Pb(Zr0.45Ti0.55)O3 thin films

• Published in: Thin solid films 2014-04, Vol.556, p.509-514
• Main Authors: Nguyen, C.T.Q., Nguyen, M.D., Dekkers, M., Houwman, E., Vu, H.N., Rijnders, G.
• Format: Article
• Language: English
• Subjects: Condensed matter: electronic structure, electrical, magnetic, and optical properties; Cross-disciplinary physics: materials science; rheology; Dielectric thin films; Dielectric, piezoelectric, ferroelectric and antiferroelectric materials; Dielectrics, piezoelectrics, and ferroelectrics and their properties; Exact sciences and technology; Film processing; Laser deposition; Liquid phase epitaxy; deposition from liquid phases (melts, solutions, and surface layers on liquids); Materials science; Membrane actuator; Membrane piezoelectric displacement; Methods of deposition of films and coatings; film growth and epitaxy; Physics; PZT thin film; Quality factor
• ISSN: 0040-6090; 1879-2731
• DOI: 10.1016/j.tsf.2014.01.007

A process for the fabrication of piezoelectric membranes with Pb(Zr0.45Ti0.55)O3 (PZT) thin films for micrometer-range actuation and sensing applications has been developed. The films grown by sol-gel on the Pt/Ti/SiO2/SOI (silicon-on-insulator) substrates have similar randomly oriented perovskite phases, but the nearly epitaxial film made by the pulsed laser deposition exhibits a more compact and flat morphology. It is observed that a denser microstructure produced by pulsed laser deposition leads to a significantly higher remanent polarization and piezoelectric coefficient in the capacitor structure, as well as in a much higher piezoelectric membrane displacement, but only a slightly enhancement of the quality factor of the membrane actuator is obtained. The membrane actuator with the epitaxial PZT thin film grown on a SrRuO3/Yttria-Stabilized Zirconia/SOI substrate using pulsed laser deposition shows significantly enhanced piezoelectric membrane displacement and quality factor. The results and discussion in our paper provide a better understanding of the relationship between the microstructure and the thin film properties, which may lead to significant improvements in device performance. •The narrower full-width at haft-maximum of peak orientation, the better film alignment.•The better film alignment, the higher ferroelectric and piezoelectric properties.•Weak dependence of internal damping or imperfect crystallinity on quality factor.