Enhanced carrier collection in p-Ni1−xO:Li/n-Si heterojunction solar cells using LiF/Al electrodes

This study confirms that a LiF/Al (LiF thickness=15Å) stack is an efficient Ohmic contact method for use in p-Ni1−xO:Li/n-Si heterojunction solar cell applications. The maximal conversion efficiency obtained was 6.31%, which was 2.1% greater compared with that of Al-only electrode cell. Temperature-...

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Bibliographic Details
Published in:Thin solid films 2014-12, Vol.573, p.159-163
Main Authors: Hsu, Feng-Hao, Wang, Na-Fu, Tsai, Yu-Zen, Wu, Chung-Yi, Cheng, Yu-Song, Chien, Ming-Hao, Houng, Mau-Phon
Format: Article
Language:English
Subjects:
Heterojunction solar cells
LiF/Al electrodes
Nickel oxide
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Summary:This study confirms that a LiF/Al (LiF thickness=15Å) stack is an efficient Ohmic contact method for use in p-Ni1−xO:Li/n-Si heterojunction solar cell applications. The maximal conversion efficiency obtained was 6.31%, which was 2.1% greater compared with that of Al-only electrode cell. Temperature-dependent current–voltage measurements confirmed that the carrier transport mechanism was dipole-assisted tunneling at the interface. The insertion of LiF acted as an effective Ohmic contact method and also assisted the back surface passivation. •LiF/Al stack is an efficient Ohmic contact method for non-heavy doped n-type Si.•The conversion efficiency of cell increases from 4.20% to 6.31%.•The carrier transport mechanism is dipole-assisted tunneling.
ISSN:0040-6090
1879-2731
DOI:10.1016/j.tsf.2014.11.025