Solution processing of CuIn(S,Se)2 and Cu(In,Ga)(S,Se)2 thin film solar cells using metal chalcogenide precursors

In order to realize the true low cost potential of Cu(In,Ga)(S,Se)2 (CIGS) thin film solar cells, high performance needs to be combined with simple and easily controllable atmospheric-based deposition processes. A molecular solution-based approach for CIGS deposition is proposed, using metal chalcog...

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Bibliographic Details
Published in:Thin solid films 2017-07, Vol.633, p.76-80
Main Authors: Arnou, Panagiota, Cooper, Carl S., Uličná, Soňa, Abbas, Ali, Eeles, Alex, Wright, Lewis D., Malkov, Andrei V., Walls, John M., Bowers, Jake W.
Format: Article
Language:English
Subjects:
Chalcopyrite
CIGS
Gallium content
Solution processing
Spray-coating
Thin-film solar cells
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Summary:In order to realize the true low cost potential of Cu(In,Ga)(S,Se)2 (CIGS) thin film solar cells, high performance needs to be combined with simple and easily controllable atmospheric-based deposition processes. A molecular solution-based approach for CIGS deposition is proposed, using metal chalcogenide precursors dissolved in an amine-thiol solvent combination. CIGS thin films were sprayed with varying Ga content and the sprayed films were incorporated into solar cells. The effect of the Ga content on the material and device properties is investigated. A champion power conversion efficiency of 9.8% (active area) was achieved, which highlights the potential of this methodology. •Pure solution-based deposition approach for CIGS thin film solar cells.•Dissolution of metal chalcogenide precursors in hydrazine-free solvents.•Straightforward absorber compositional control, by varying the precursor solution.•Tuning of material and solar cell properties with Ga content.
ISSN:0040-6090
1879-2731
DOI:10.1016/j.tsf.2016.10.011