Effect of Li-doping on low temperature solution-processed indium–zinc oxide thin film transistors

Lithium (Li)-doped indium zinc oxide (IZO) thin film transistors (TFTs) were fabricated on solution-processed zirconium oxide gate dielectrics using a low temperature all solution process. Li-doping in IZO thin films led to higher crystallinity, even at process temperature lower than 300°C, and to t...

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Bibliographic Details
Published in:Thin solid films 2017-11, Vol.641, p.19-23
Main Authors: Han, Soo-Yeun, Nguyen, Manh-Cuong, Nguyen, An Hoang Thuy, Choi, Jae- Won, Kim, Jung-Youn, Choi, Rino
Format: Article
Language:English
Subjects:
Indium zinc oxide
Lithium
Oxide semiconductor
Solution metal oxide
Thin film transistor
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Summary:Lithium (Li)-doped indium zinc oxide (IZO) thin film transistors (TFTs) were fabricated on solution-processed zirconium oxide gate dielectrics using a low temperature all solution process. Li-doping in IZO thin films led to higher crystallinity, even at process temperature lower than 300°C, and to the formation of favorable oxidation states of metal ions. The results were confirmed by electrical property analysis of the Li-doped IZO TFTs. For Li content varied from 0 to 16.6 at.%, the highest field-effect mobility, on/off current ratio, subthreshold slope and stress bias stability were obtained for Li-doping concentration of 9.0mol%. •Li-doped indium zinc oxide TFTs was fabricated using all solution process.•Li doping improves the crystallity of indium zinc oxide films processed at 300°C.•High mobility and bias-stability were obtained with the optimal Li doping.
ISSN:0040-6090
1879-2731
DOI:10.1016/j.tsf.2017.05.024