Influence of stabilizing agent on dip coating of Cu2ZnSnS4 thin film

• Published in: Thin solid films 2017-08, Vol.636, p.144-149
• Main Authors: Chaudhari, Sushmita, Kannan, P.K., Dey, Suhash Ranjan
• Format: Article
• Language: English
• Subjects: Copper zinc tin sulfide; Dip coating; Kesterite structure; Thin film solar cells; Triethanolamine
• ISSN: 0040-6090; 1879-2731
• DOI: 10.1016/j.tsf.2017.05.045

In the present study, Cu2ZnSnS4 (CZTS) thin films with different amount of Triethanolamine (0μl, 30μl, 150μl and 300μl) as a stabilizing agent in 200ml precursor solution have been synthesized on glass substrate using a simple dip coating technique followed by annealing in nitrogen atmosphere at 300°C for 1h with 10°C/min ramping rate. The influence of different amounts of Triethanolamine (TEA) on CZTS films are assessed through studies on phase formation, structural information, morphology, compositions and band gap energy which are obtained using X-Ray Diffraction, Raman Spectroscopy, Scanning Electron Microscopy, Energy Dispersive Spectroscopy and UV–Vis spectroscopy respectively. 30μl of TEA addition is found to generate void free evenly spread stoichiometric CZTS film with a narrow Raman CZTS vibrational mode at 329cm−1 and energy band gap of 1.47eV. •Synthesis of dip coated Cu2ZnSnS4 film using Triethanolamine in precursor solution•Cu2ZnSnS4 films of Kesterite structured phase are observed.•Small amount of Triethanolamine resulting more orderly and crystalline film•Bandgap of prepared CZTS films is 1.47eV, suitable for solar cell applications.