The formation of SiCN film on Si substrate by constant-source diffusion

• Published in: Thin solid films 2017-11, Vol.642, p.124-128
• Main Authors: He, X.L., Chai, X.Z., Yu, L., Han, P., Fan, S., Huang, L., Tao, T., Li, Z.Y., Xie, Z.L., Xiu, X.Q., Chen, P., Liu, B., Hua, X.M., Zhao, H., Zhang, R., Zheng, Y.D.
• Format: Article
• Language: English
• Subjects: Composition; Constant-source diffusion; Crystal structure; SiCN film
• ISSN: 0040-6090; 1879-2731
• DOI: 10.1016/j.tsf.2017.09.034

The SiCN film, which has the same crystal structure as 3C-SiC verified by X-ray diffraction and Raman scattering, has been formed on Si (111) substrate by constant-source diffusion using a chemical vapor deposition system. Via X-ray photoelectron spectroscopy, the film has been identified as the mixture of elemental Si and SiC1−xNx alloy, with the SiC1−xNx content decreases from 87.4% to 17.9% and the mole fraction x increases from 0.17 to 0.21, as the depth extends from the near surface to the interface. The measured composition distribution can be well explained by the constant-source diffusion model, confirms that the formation mechanism of the SiCN film is the diffusion of C and N into the Si substrate. This provides a new method for fabricating crystalline SiCN thin films. •The crystal structure, composition and chemical bonds of the SiCN film are studied.•The SiCN film is composed of elemental Si and SiC1−xNx alloy.•The SiCN film has the same crystal structure as 3C-SiC.•The growth mechanism of the SiCN film is discussed based on the diffusion model.