Improved leakage current properties of ZrO2/(Ta/Nb)Ox-Al2O3/ZrO2 nanolaminate insulating stacks for dynamic random access memory capacitors

The influence of amorphous high-k interlayers, such as Al2O3, (Ta/Nb)Ox (TN), and (Ta/Nb)Ox-Al2O3 (TNA), on the leakage current (J) and dielectric constant (k) for metal-insulator-metal capacitors with ZrO2/high-k/ZrO2 nanolaminate insulating films and TiN electrodes was investigated. The insulating...

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Bibliographic Details
Published in:Thin solid films 2018-06, Vol.655, p.48-53
Main Authors: Onaya, Takashi, Nabatame, Toshihide, Sawada, Tomomi, Kurishima, Kazunori, Sawamoto, Naomi, Ohi, Akihiko, Chikyow, Toyohiro, Ogura, Atsushi
Format: Article
Language:English
Subjects:
(Ta/Nb)Ox
Al2O3
Atomic layer deposition (ALD)
Dynamic random access memory (DRAM)
High-k material
Metal-insulator-metal capacitor
ZrO2
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Summary:The influence of amorphous high-k interlayers, such as Al2O3, (Ta/Nb)Ox (TN), and (Ta/Nb)Ox-Al2O3 (TNA), on the leakage current (J) and dielectric constant (k) for metal-insulator-metal capacitors with ZrO2/high-k/ZrO2 nanolaminate insulating films and TiN electrodes was investigated. The insulating films were prepared by atomic layer deposition followed by post-deposition annealing at 600 °C. The capacitance equivalent thickness (CET) of the capacitors increased in the order ZrO2/(Ta/Nb)Ox/ZrO2 (ZTNZ) 
ISSN:0040-6090
1879-2731
DOI:10.1016/j.tsf.2018.02.010