Exploration of Si-doped SnO2 composition and properties of oxide/Ag/oxide multilayers prepared using continuous composition spread by sputtering

• Published in: Thin solid films 2018-08, Vol.660, p.606-612
• Main Authors: Jang, Joohee, Yim, Haena, Choi, Ji-won
• Format: Article
• Language: English
• Subjects: Continuous composition spread; Electrical properties; Optical properties; Radio-frequency magnetron sputtering; Si-doped SnO2/Ag/Si-doped SnO2; Thin films; Transparent conducting oxides
• ISSN: 0040-6090; 1879-2731
• DOI: 10.1016/j.tsf.2018.05.010

Si-doped SnO2/Ag/Si-doped SnO2 multilayer thin films were fabricated on flexible substrates at room temperature for indium free transparent conducting electrode. The optimal composition of Si-doped SnO2 was found by investigating electrical properties of various composition deposited by off-axis RF magnetron sputtering continuous composition spread method. Si-doped SnO2 thin films have low resistivity (0.07 Ω·cm) at doping content of Si (0.14 wt%). Si-doped SnO2/Ag/Si-doped SnO2 multilayer thin films were fabricated using optimized composition deposited by on-axis RF and DC sputtering. The optimized Si-doped SnO2/Ag/Si-doped SnO2 multilayer thin film has resistivity of 9.1 × 10−5 Ω·cm and 81% transmittance in the visible region (550 nm). •Si-doped SnO2 oxide was developed for oxide-metal-oxide (OMO) multilayer.•Best sputtered oxide composition was found by continuous composition spread method.•OMO multilayer on polymer has a sheet resistance of 9.2 Ω/sq and 81% transmittance.•Bending test shows that the OMO multilayer can be employed for flexible electronics.