Impact of a SiGe interfacial layer on the growth of a SiC layer on Si with voids at the interface

• Published in: Thin solid films 2018-09, Vol.662, p.103-109
• Main Authors: Juluri, Raghavendra Rao, Gaiduk, Peter, Hansen, John Lundsgaard, Larsen, Arne Nylandsted, Julsgaard, Brian
• Format: Article
• Language: English
• Subjects: Molecular beam epitaxy; SiC; SiGe interfacial layer; Voids
• ISSN: 0040-6090; 1879-2731
• DOI: 10.1016/j.tsf.2018.07.036

A comparative study is performed of the properties of SiC films, grown in the presence and absence of a Si1−xGex interfacial layer on top of a Si(111) substrate with x = 0.23. The SiC film growth is carried out at 960 °C by carbonization of the substrates with a solid carbon source using molecular beam epitaxy, leading to void formation at the SiC/substrate interface. The film properties have been investigated by transmission electron microscopy, x-ray diffraction, Rutherford backscattering spectrometry, and atomic force microscopy. The results show that the presence of the Si1−xGex layer improves the crystal quality and surface smoothness. •The impact of a SiGe interface layer on a carbonized SiC film on Si is determined.•The structure, strain, morphology, and Ge distribution of the film are presented.•The SiGe interface layer improves the crystalline quality and surface smoothness.