Effects of ion irradiation on the structural and electrical properties of HfO2/SiON/Si p-metal oxide semiconductor capacitors

• Published in: Thin solid films 2019-07, Vol.682, p.156-162
• Main Authors: Manikanthababu, N., Saikiran, V., Basu, T., Prajna, K., Vajandar, S., Pathak, A.P., Panigrahi, B.K., Osipowicz, T., Rao, S.V.S. Nageswara
• Format: Article
• Language: English
• Subjects: Current-voltage measurements; Hafnium dioxide; Intermixing; Metal-oxide-semiconductor technology; Swift heavy ion irradiation
• ISSN: 0040-6090; 1879-2731
• DOI: 10.1016/j.tsf.2019.03.009

The influence of 120 MeV Ag ion irradiation on the structural and electrical properties of HfO2 (3 nm)/SiON (1 nm)/Si (n-type), grown by atomic layer deposition, has been investigated. X-ray Reflectivity and X-ray Photoelectron Spectroscopy measurements suggested the formation of a mixed interlayer of HfSiON above a critical fluence of 1 × 1012 ions/cm2. The observed irradiation induced changes in the leakage current have been attributed to the defects and structural changes caused by ion irradiation. The influence of various quantum tunneling mechanisms on the leakage current has been investigated as a function of ion fluence. The structural changes, defects dynamics and the consequent effects on leakage current have been explained within the framework of ion induced annealing, creation of defects and intermixing effects. •Electronic excitation-induced intermixing resulted in HfSiON interlayer formation.•Ion-induced annealing is found at low fluences until 1 × 1012 ions/cm2.•After a critical fluence, leakage current increased due to high electronic excitation.•Poole-Frenkel tunneling clearly indicates the increase in the density of defects.