Sequential lateral crystallization of amorphous silicon on glass by blue laser annealing for high mobility thin-film transistors

• Published in: Thin solid films 2019-07, Vol.681, p.93-97
• Main Authors: Jung, Young Hun, Hong, Seungpyo, Lee, Suhui, Jin, Seonghyun, Kim, Tae-Woong, Chang, Yeoungjin, Jang, Jin
• Format: Article
• Language: English
• Subjects: Blue laser annealing; Grain size; High mobility; Low-temperature polycrystalline silicon; Sequential lateral crystallization; Thin-film transistors
• ISSN: 0040-6090; 1879-2731
• DOI: 10.1016/j.tsf.2019.04.023

We report the thickness effect of amorphous silicon for the polycrystalline silicon (poly-Si) layer laterally crystallized by blue laser annealing (BLA) using 50 μs melting time. The grain size is much larger and full width at half-maximum of Raman intensity is lower compared to those of the poly-Si by excimer laser annealing. It is found that the average width of lateral grain is wider than 3 μm and full width of half maximum of Raman intensity for the BLA poly-Si with an optimum thickness of 90 nm is 3.32 cm−1. The p-type poly-Si thin-film transistor with 90 nm exhibits field-effect mobility of 161.91 ± 6.14 cm2/Vs and subthreshold swing of 227 ± 7 mV/dec. •High mobility TFT with 90 nm poly-Si on glass crystallized by blue laser using 50 μs melting time