Growth of ReS2 thin films by pulsed laser deposition

We present results on growth of ReS2 thin film both on c plane sapphire substrate and MoS2 template by pulsed laser deposition (PLD). Films tend to grow with (0001)ReS2 ⊥ (0001)Al2O3 and (0001)ReS2 ⊥ (0001)MoS2 ∥ (0001)Al2O3 at deposition temperature below 300 °C. Films are polycrystalline grown at...

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Bibliographic Details
Published in:Thin solid films 2019-09, Vol.685, p.81-87
Main Authors: Vishal, B., Sharona, H., Bhat, U., Paul, A., Sreedhara, M.B., Rajaji, V., Sarma, S.C., Narayana, C., Peter, S.C., Datta, R.
Format: Article
Language:English
Subjects:
2D materials
Molybdenum disulphide
Rhenium disulphide
Thin films
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Summary:We present results on growth of ReS2 thin film both on c plane sapphire substrate and MoS2 template by pulsed laser deposition (PLD). Films tend to grow with (0001)ReS2 ⊥ (0001)Al2O3 and (0001)ReS2 ⊥ (0001)MoS2 ∥ (0001)Al2O3 at deposition temperature below 300 °C. Films are polycrystalline grown at temperature above 300 °C. The smoothness and epitaxial quality of the films are significantly improved when grown on MoS2 template compared to sapphire substrate. The results show that PLD is suitable to grow ReS2 thin film over large area (10 × 10 mm2) for practical device application. •Large area epitaxial (10 × 10 mm2) growth of ReS2 thin film by PLD•Improved quality ReS2 Thin film on MoS2 template compared to the sapphire substrate•Truncated ReS2 thin films possess optical emission peaks corresponding to both monolayer and multilayer
ISSN:0040-6090
1879-2731
DOI:10.1016/j.tsf.2019.06.007