Loading…
Titanium(IV) isopropoxide as a source of titanium and oxygen atoms in carbon based coatings deposited by Radio Frequency Plasma Enhanced Chemical Vapour Deposition method
•Carbon base coating deposited using combination of CH4 and Ti[OCH(CH3)2]4 atmospheres.•Formation of sp2 hybridized carbon matrix enriched with titanium oxide.•Tensile stress for the coatings deposited at relatively high Ti[OCH(CH3)2]4 partial pressure.•Refractive index of carbon base coatings achie...
Saved in:
Published in: | Thin solid films 2020-01, Vol.693, p.137697, Article 137697 |
---|---|
Main Authors: | , , , , , , , , , |
Format: | Article |
Language: | English |
Subjects: | |
Citations: | Items that this one cites Items that cite this one |
Online Access: | Get full text |
Tags: |
Add Tag
No Tags, Be the first to tag this record!
|
Summary: | •Carbon base coating deposited using combination of CH4 and Ti[OCH(CH3)2]4 atmospheres.•Formation of sp2 hybridized carbon matrix enriched with titanium oxide.•Tensile stress for the coatings deposited at relatively high Ti[OCH(CH3)2]4 partial pressure.•Refractive index of carbon base coatings achieves the value of 2.1 at 640 nm.
This paper presents properties of TiOx-DLC (titanium oxides incorporated diamond like carbon) coatings deposited by RF PECVD (Radio Frequency Plasma Enhanced Chemical Vapour Deposition) method using combination of methane (CH4) and titanium(IV) isopropoxide (Ti[OCH(CH3)2]4) atmospheres. The obtained results show that the deposition process of TiOx-DLC coatings is strongly affected by the concentration of TTIP (titanium (IV) isopropoxide) precursor in working atmosphere. The proposed technology allows to obtain TiOx-DLC coatings with Ti concentration up to 10 at.%. Higher concentrations of Ti in the coating (5 and 10 at.%) result in twice the concentration of oxygen. As the results of the investigation it was noticed, stable TiOx-DLC coatings showing acceptable hardness and residual stress, as well as good optical properties contain up to 1.5 at.% of Ti and can be deposited at 400 V of the negative self-bias using 0.05 of TTIP partial pressure ratio. |
---|---|
ISSN: | 0040-6090 |
DOI: | 10.1016/j.tsf.2019.137697 |