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Effect of interfacial passivation on inverted pyramid silicon/poly(3,4-ethylenedioxythiophene):Poly(styrenesulfonate) heterojunction solar cells
•Fabrication of Si inverted pyramids using Cu-assisted anisotropic etching.•Passivation of thin oxide layers on silicon.•Al2O3 and TiO2 thin layers enhance the interfacial conformity.•The interface optimized cell displaying 16.04% efficiency. The poly(3,4-ethylenedioxythiophene) polystyrene sulfonat...
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Published in: | Thin solid films 2020-09, Vol.709, p.138139, Article 138139 |
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creator | Ali, Gohar Shinde, Sambhaji S. Sami, Abdul Kim, Sung–Hae Wagh, Nayantara K. Lee, Jung-Ho |
description | •Fabrication of Si inverted pyramids using Cu-assisted anisotropic etching.•Passivation of thin oxide layers on silicon.•Al2O3 and TiO2 thin layers enhance the interfacial conformity.•The interface optimized cell displaying 16.04% efficiency.
The poly(3,4-ethylenedioxythiophene) polystyrene sulfonate (PEDOT:PSS) and inverted pyramid n-silicon heterojunction solar cells have been extensively investigated based on their light trapping behaviour, rationally high efficiency and cost effectiveness. However, inferior junction conformity still remains a great challenge. In this work, we present the effect of passivation using aluminium oxide (Al2O3) on the front surface and titanium oxide (TiO2) on rear interface in the inverted pyramid -Si/PEDOT: PSS heterojunction solar cells using the atomic layer deposition technique. The front surface Al2O3 layer can enhance the surface energy, which generates the uniform coating of PEDOT:PSS, acting as an electron blocking layer. Furthermore, TiO2 thin layer deposited on rear interface works as a hole blocking layer, which can suppress the electrical losses and the charge recombination. The best cell demonstrated a conversion efficiency of 16.04% with an open-circuit voltage of 0.63 V, fill factor of 71.5% and a high current density of 35.45 mA/cm2. These findings suggest a promising approach to attainment of next-generation hybrid solar cells. |
doi_str_mv | 10.1016/j.tsf.2020.138139 |
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The poly(3,4-ethylenedioxythiophene) polystyrene sulfonate (PEDOT:PSS) and inverted pyramid n-silicon heterojunction solar cells have been extensively investigated based on their light trapping behaviour, rationally high efficiency and cost effectiveness. However, inferior junction conformity still remains a great challenge. In this work, we present the effect of passivation using aluminium oxide (Al2O3) on the front surface and titanium oxide (TiO2) on rear interface in the inverted pyramid -Si/PEDOT: PSS heterojunction solar cells using the atomic layer deposition technique. The front surface Al2O3 layer can enhance the surface energy, which generates the uniform coating of PEDOT:PSS, acting as an electron blocking layer. Furthermore, TiO2 thin layer deposited on rear interface works as a hole blocking layer, which can suppress the electrical losses and the charge recombination. The best cell demonstrated a conversion efficiency of 16.04% with an open-circuit voltage of 0.63 V, fill factor of 71.5% and a high current density of 35.45 mA/cm2. These findings suggest a promising approach to attainment of next-generation hybrid solar cells.</description><identifier>ISSN: 0040-6090</identifier><identifier>EISSN: 1879-2731</identifier><identifier>DOI: 10.1016/j.tsf.2020.138139</identifier><language>eng</language><publisher>Elsevier B.V</publisher><subject>Atomic layer deposition ; Hybrid solar cells ; Interfacial passivation ; Inverted pyramids ; PSS ; Si/PEDOT</subject><ispartof>Thin solid films, 2020-09, Vol.709, p.138139, Article 138139</ispartof><rights>2020 Elsevier B.V.</rights><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c297t-a5be107e63c56fcbcd630098d811eb17aa9c848d9a2f4f34dcf5fc7c1123d3ac3</citedby><cites>FETCH-LOGICAL-c297t-a5be107e63c56fcbcd630098d811eb17aa9c848d9a2f4f34dcf5fc7c1123d3ac3</cites><orcidid>0000-0002-6731-3111 ; 0000-0003-3460-987X</orcidid></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><link.rule.ids>314,780,784,27924,27925</link.rule.ids></links><search><creatorcontrib>Ali, Gohar</creatorcontrib><creatorcontrib>Shinde, Sambhaji S.</creatorcontrib><creatorcontrib>Sami, Abdul</creatorcontrib><creatorcontrib>Kim, Sung–Hae</creatorcontrib><creatorcontrib>Wagh, Nayantara K.</creatorcontrib><creatorcontrib>Lee, Jung-Ho</creatorcontrib><title>Effect of interfacial passivation on inverted pyramid silicon/poly(3,4-ethylenedioxythiophene):Poly(styrenesulfonate) heterojunction solar cells</title><title>Thin solid films</title><description>•Fabrication of Si inverted pyramids using Cu-assisted anisotropic etching.•Passivation of thin oxide layers on silicon.•Al2O3 and TiO2 thin layers enhance the interfacial conformity.•The interface optimized cell displaying 16.04% efficiency.
The poly(3,4-ethylenedioxythiophene) polystyrene sulfonate (PEDOT:PSS) and inverted pyramid n-silicon heterojunction solar cells have been extensively investigated based on their light trapping behaviour, rationally high efficiency and cost effectiveness. However, inferior junction conformity still remains a great challenge. In this work, we present the effect of passivation using aluminium oxide (Al2O3) on the front surface and titanium oxide (TiO2) on rear interface in the inverted pyramid -Si/PEDOT: PSS heterojunction solar cells using the atomic layer deposition technique. The front surface Al2O3 layer can enhance the surface energy, which generates the uniform coating of PEDOT:PSS, acting as an electron blocking layer. Furthermore, TiO2 thin layer deposited on rear interface works as a hole blocking layer, which can suppress the electrical losses and the charge recombination. The best cell demonstrated a conversion efficiency of 16.04% with an open-circuit voltage of 0.63 V, fill factor of 71.5% and a high current density of 35.45 mA/cm2. These findings suggest a promising approach to attainment of next-generation hybrid solar cells.</description><subject>Atomic layer deposition</subject><subject>Hybrid solar cells</subject><subject>Interfacial passivation</subject><subject>Inverted pyramids</subject><subject>PSS</subject><subject>Si/PEDOT</subject><issn>0040-6090</issn><issn>1879-2731</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2020</creationdate><recordtype>article</recordtype><recordid>eNp9kN1KAzEQhYMoWKsP4N1eWnDbZLPdH72SUn-goBd6HdLJhKakmyWJxX0LH9nUei0MDAfmzJn5CLlmdMooq2bbaQx6WtAiad4w3p6QEWvqNi9qzk7JiNKS5hVt6Tm5CGFLKWVFwUfke6k1QsyczkwX0WsJRtqslyGYvYzGdVkq0-3RR1RZP3i5MyoLxhpw3ax3drjht2WOcTNY7FAZ9zXEjXH9JqnJ3dthIMTBJxU-rXadjDjJNpiy3Pazg9-I4Kz0GaC14ZKcaWkDXv31Mfl4XL4vnvPV69PL4mGVQ9HWMZfzNTJaY8VhXmlYg6o4pW2jGsZwzWopW2jKRrWy0KXmpQI911ADYwVXXAIfE3bcC96F4FGL3pud9INgVByQiq1ISMUBqTgiTZ77owfTYXuDXgQw2EH62ieIQjnzj_sH84mEbw</recordid><startdate>20200901</startdate><enddate>20200901</enddate><creator>Ali, Gohar</creator><creator>Shinde, Sambhaji S.</creator><creator>Sami, Abdul</creator><creator>Kim, Sung–Hae</creator><creator>Wagh, Nayantara K.</creator><creator>Lee, Jung-Ho</creator><general>Elsevier B.V</general><scope>AAYXX</scope><scope>CITATION</scope><orcidid>https://orcid.org/0000-0002-6731-3111</orcidid><orcidid>https://orcid.org/0000-0003-3460-987X</orcidid></search><sort><creationdate>20200901</creationdate><title>Effect of interfacial passivation on inverted pyramid silicon/poly(3,4-ethylenedioxythiophene):Poly(styrenesulfonate) heterojunction solar cells</title><author>Ali, Gohar ; Shinde, Sambhaji S. ; Sami, Abdul ; Kim, Sung–Hae ; Wagh, Nayantara K. ; Lee, Jung-Ho</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c297t-a5be107e63c56fcbcd630098d811eb17aa9c848d9a2f4f34dcf5fc7c1123d3ac3</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2020</creationdate><topic>Atomic layer deposition</topic><topic>Hybrid solar cells</topic><topic>Interfacial passivation</topic><topic>Inverted pyramids</topic><topic>PSS</topic><topic>Si/PEDOT</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Ali, Gohar</creatorcontrib><creatorcontrib>Shinde, Sambhaji S.</creatorcontrib><creatorcontrib>Sami, Abdul</creatorcontrib><creatorcontrib>Kim, Sung–Hae</creatorcontrib><creatorcontrib>Wagh, Nayantara K.</creatorcontrib><creatorcontrib>Lee, Jung-Ho</creatorcontrib><collection>CrossRef</collection><jtitle>Thin solid films</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Ali, Gohar</au><au>Shinde, Sambhaji S.</au><au>Sami, Abdul</au><au>Kim, Sung–Hae</au><au>Wagh, Nayantara K.</au><au>Lee, Jung-Ho</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Effect of interfacial passivation on inverted pyramid silicon/poly(3,4-ethylenedioxythiophene):Poly(styrenesulfonate) heterojunction solar cells</atitle><jtitle>Thin solid films</jtitle><date>2020-09-01</date><risdate>2020</risdate><volume>709</volume><spage>138139</spage><pages>138139-</pages><artnum>138139</artnum><issn>0040-6090</issn><eissn>1879-2731</eissn><abstract>•Fabrication of Si inverted pyramids using Cu-assisted anisotropic etching.•Passivation of thin oxide layers on silicon.•Al2O3 and TiO2 thin layers enhance the interfacial conformity.•The interface optimized cell displaying 16.04% efficiency.
The poly(3,4-ethylenedioxythiophene) polystyrene sulfonate (PEDOT:PSS) and inverted pyramid n-silicon heterojunction solar cells have been extensively investigated based on their light trapping behaviour, rationally high efficiency and cost effectiveness. However, inferior junction conformity still remains a great challenge. In this work, we present the effect of passivation using aluminium oxide (Al2O3) on the front surface and titanium oxide (TiO2) on rear interface in the inverted pyramid -Si/PEDOT: PSS heterojunction solar cells using the atomic layer deposition technique. The front surface Al2O3 layer can enhance the surface energy, which generates the uniform coating of PEDOT:PSS, acting as an electron blocking layer. Furthermore, TiO2 thin layer deposited on rear interface works as a hole blocking layer, which can suppress the electrical losses and the charge recombination. The best cell demonstrated a conversion efficiency of 16.04% with an open-circuit voltage of 0.63 V, fill factor of 71.5% and a high current density of 35.45 mA/cm2. These findings suggest a promising approach to attainment of next-generation hybrid solar cells.</abstract><pub>Elsevier B.V</pub><doi>10.1016/j.tsf.2020.138139</doi><orcidid>https://orcid.org/0000-0002-6731-3111</orcidid><orcidid>https://orcid.org/0000-0003-3460-987X</orcidid></addata></record> |
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subjects | Atomic layer deposition Hybrid solar cells Interfacial passivation Inverted pyramids PSS Si/PEDOT |
title | Effect of interfacial passivation on inverted pyramid silicon/poly(3,4-ethylenedioxythiophene):Poly(styrenesulfonate) heterojunction solar cells |
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