Fabrication of high-quality epitaxial Bi1-xSbx films by two-step growth using molecular beam epitaxy

High-quality epitaxial Bi1-xSbx (BiSb) films were formed by two-step growth using molecular beam epitaxy. The use of two-step growth, which involves lower-temperature growth at ~150 °C followed by higher-temperature (~250 °C) growth, and lattice-matched substrates such as BaF2 (111) are key to obtai...

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Bibliographic Details
Published in:Thin solid films 2020-11, Vol.713, p.138361, Article 138361
Main Authors: Ueda, K., Hadate, Y., Suzuki, K., Asano, H.
Format: Article
Language:English
Subjects:
Bismuth antimonide
Mobility
Molecular beam epitaxy
Thin films
Topological materials
Two-step growth
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Summary:High-quality epitaxial Bi1-xSbx (BiSb) films were formed by two-step growth using molecular beam epitaxy. The use of two-step growth, which involves lower-temperature growth at ~150 °C followed by higher-temperature (~250 °C) growth, and lattice-matched substrates such as BaF2 (111) are key to obtain high-quality BiSb films. The composition of the BiSb films can also be systematically tuned using this growth procedure. The epitaxial BiSb films showed higher crystallinity (full width at half maximum: ~0.69°) and higher mobility (~2100 cm2/Vs), which indicate that sufficient quality films were obtained. Such films are expected to pave the way for the fabrication of electronic devices using topological BiSb. •High-quality epitaxial BiSb films were formed by using molecular beam epitaxy.•Two-step growth and the use of lattice-matched substrates are necessary.•The BaF2 (111) substrate is one of the best substrates for the growth of BiSb films.
ISSN:0040-6090
1879-2731
DOI:10.1016/j.tsf.2020.138361