Fabrication of Reduced Graphene Oxide Thin Films on Corona Treated Silicon Substrates

• Published in: Thin solid films 2021-06, Vol.728, p.138693, Article 138693
• Main Authors: BUI, Tung Thanh, HUYNH, Tien Minh, DANG, Chien Mau
• Format: Article
• Language: English
• Subjects: annealing; corona plasma; graphene oxide; reduced graphene oxide; thin film
• ISSN: 0040-6090; 1879-2731
• DOI: 10.1016/j.tsf.2021.138693

•Corona plasma was used to treat silicon substrate surfaces•Reduced graphene oxide (rGO) was formed by short time annealing of spun GO layers•Large area and uniform rGO films were obtained•rGO films had sheet resistance of the order of 5-35 ohm/sq Graphene is a material with excellent properties. However, the manufacture of a single-layer graphene film with a large area is challenging. It requires modern and expensive equipment. In this study, we suggested another approach to improve these problems. The raw material graphite was used to prepare graphene oxide solutions. The resulting graphene oxide solutions were then dispersed onto silicon substrates first treated with corona plasma, which increases the adhesion between materials and substrates. In the next step, these covered substrates were deoxygenated by heating at very high temperatures for a short time to form reduced graphene oxide, which has graphene-like properties. The reduced graphene oxide films formed had a uniform structure over a large area of 2 × 2 cm2 with an oxygen content of about 4%, a film roughness of less than 5 nm, and a sheet resistance of 4-5 ohm/square.