Concurrent synthesis and boron-doping of amorphous carbon films by focused ion beam-assisted chemical vapor deposition

•Boron-doped carbon films via focused ion beam induced chemical vapor deposition.•Concurrent deposition, boron doping, and patterning of boron-doped carbon films.•Lithography-free patterning of boron-doped carbon films. A method to directly deposit boron-doped amorphous carbon films via focused ion...

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Bibliographic Details
Published in:Thin solid films 2021-07, Vol.730, p.138704, Article 138704
Main Authors: Matsumoto, Ryo, Sadki, El Hadi S., Tanaka, Hiromi, Yamamoto, Sayaka, Adachi, Shintaro, Younis, Adnan, Takeya, Hiroyuki, Takano, Yoshihiko
Format: Article
Language:English
Subjects:
Amorphous carbon film
Boron doping
Chemical vapor deposition
Focused ion beam
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Summary:•Boron-doped carbon films via focused ion beam induced chemical vapor deposition.•Concurrent deposition, boron doping, and patterning of boron-doped carbon films.•Lithography-free patterning of boron-doped carbon films. A method to directly deposit boron-doped amorphous carbon films via focused ion beam-assisted chemical vapor deposition is reported. The presence of boron in the deposited films was verified by X-ray photoelectron spectroscopy. Raman spectroscopy analysis confirmed the amorphousity of the films. The as-deposited films exhibited typical semiconducting behavior from electrical resistance versus temperature measurements. The presented fabrication technique is a one step process for the simultaneous deposition, boron-doping, and patterning of the films, and hence may offer an effective way to directly fabricate boron-doped amorphous carbon-based devices without the need for templates, which is highly advantageous for applications.
ISSN:0040-6090
1879-2731
DOI:10.1016/j.tsf.2021.138704