Characterization of deep interface states in SiO2/B-doped diamond using the transient photocapacitance method

•Diamond metal-oxide-semiconductor (MOS) structure on B-doped diamond was fabricated.•SiO2 film acts as gate dielectric.•Acceptor-type defect at 1.28 eV in the depletion layer of the diamond MOS diode.•SiO2/B-doped diamond interface state at 1.82 eV. We fabricated a diamond metal oxide semiconductor...

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Bibliographic Details
Published in:Thin solid films 2022-01, Vol.741, p.139026, Article 139026
Main Authors: Maida, Osamu, Kanemoto, Daiskuke, Hirose, Tetsuya
Format: Article
Language:English
Subjects:
Deep defect
Diamond film
Homoepitaxy
Photocapacitance
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Summary:•Diamond metal-oxide-semiconductor (MOS) structure on B-doped diamond was fabricated.•SiO2 film acts as gate dielectric.•Acceptor-type defect at 1.28 eV in the depletion layer of the diamond MOS diode.•SiO2/B-doped diamond interface state at 1.82 eV. We fabricated a diamond metal oxide semiconductor structure with a silicon dioxide (SiO2) film as the gate dielectric on B-doped diamond grown by a high-power-density microwave-plasma chemical vapor deposition method. The SiO2/B-doped diamond interface was characterized using a transient photocapacitance technique. The concentration of B in the B-doped diamond film was estimated to be 4.0 × 1017 cm−3, based on the intensity ratio of the exciton emissions observed in the cathodoluminescence measurements at approximately 80 K. Acceptor-type defects could be observed at approximately 1.28 and 1.82 eV above the valence-band edge. The observed defect at approximately 1.82 eV above the valence-band edge is expected to be an interface state of the SiO2/B-doped diamond.
ISSN:0040-6090
1879-2731
DOI:10.1016/j.tsf.2021.139026