Segregation effects of doped VN and ZrN on magnetic and microstructural characteristics of FePt-based films

• Published in: Thin solid films 2024-06, Vol.798, p.140376, Article 140376
• Main Authors: Tsai, Jai-Lin, Lin, Jhih-Hong, Chen, Tsung-Yi, Lin, Yu-Chun, Liu, Li-Xiang, Hsieh, Ming-Wei, Chen, Jyun-you
• Format: Article
• Language: English
• Subjects: Coercivity; Columnar grains; Grains size; Granular microstructure; Perpendicular magnetic anisotropy; Segregation
• ISSN: 0040-6090; 1879-2731
• DOI: 10.1016/j.tsf.2024.140376

•FePt(BN-VN, Ag, C) film shows high perpendicular magnetic anisotropy.•FePt(BN-VN, Ag, C) film illustrates high out-of-plane coercivity.•The FePt grains present a more uniform columnar structure with VN doping.•The microstructure was improved by grain boundary segregation of VN. Segregants are essential materials for forming the complexation or granular microstructure in thin films for magnetic recording media. One such film, FePt-BN, has a metallic L10 FePt main phase as its matrix, in addition to having BN and C segregants at the grain boundaries. Amorphous BN has sufficient mechanical strength to support the columnar growth of FePt grains, however, it has a lower deposition rate resulting in columnar grains with a nonuniform aspect ratio. Moreover, some B diffuses in the interstitial site of FePt lattices. To overcome these limitations, this study added the transition nitride VN and ZrN with equal volume percentages to replace some BN segregants in FePt(BN, Ag, C) films: substantially different segregation behaviors were observed. Microstructural imaging mapping revealed that although VN segregated the FePt grains boundary, ZrN was diffused in the lattice. The FePt-BN-ZrN film thus had more disordered grains contributing to a higher in-plane magnetization and wider hard axis magnetic hysteresis loops than did FePt-BN-VN. The FePt-BN-VN film has the highest perpendicular magnetic anisotropy constant (Ku= 2.17 × 106 J/m3) and coercivity (Hc= 4 T); moreover, parallel remanence magnetization was minimal with a linear in-plane magnetization loop. The FePt-BN-VN film was sputtered directly on MgO(100) but depositing the FePt-BN-ZrN film required a 2-nm-thick FePt nucleation layer. The high atomic number of Zr and high sputter yield ratio (YN/Ymetal) of ZrN may increase the sites occupied by N, potentially affecting ZrN segregation.