Plasma etching of high- k and metal gate materials

Etching characteristics of high- k dielectric materials (HfO 2) and metal electrode materials (Pt, TaN) have been studied in high-density chlorine-containing plasmas at pressures around 10 mTorr. The etching of HfO 2 was performed in BCl 3 without rf biasing, giving an etch rate of about 5 nm/min wi...

Full description

Saved in:
Bibliographic Details
Published in:Vacuum 2006-05, Vol.80 (7), p.761-767
Main Authors: Nakamura, Keisuke, Kitagawa, Tomohiro, Osari, Kazushi, Takahashi, Kazuo, Ono, Kouichi
Format: Article
Language:English
Subjects:
Chlorine-containing plasma
HfO 2
High- k dielectrics
Metal electrode materials
Plasma etching
TaN
Citations: Items that this one cites
Items that cite this one
Online Access:Get full text
Tags: Add Tag
No Tags, Be the first to tag this record!
Description
Summary:Etching characteristics of high- k dielectric materials (HfO 2) and metal electrode materials (Pt, TaN) have been studied in high-density chlorine-containing plasmas at pressures around 10 mTorr. The etching of HfO 2 was performed in BCl 3 without rf biasing, giving an etch rate of about 5 nm/min with a high selectivity of >10 over Si and SiO 2. The etching of Pt and TaN was performed in Ar/O 2 with high rf biasing and in Ar/Cl 2 with low rf biasing, respectively, giving a Pt etch rate of about several tens nm/min and a TaN etch rate of about 200 nm/min with a high selectivity of >8 over HfO 2 and SiO 2. The etched profiles were outwardly tapered for Pt, owing to the redeposition of etch or sputter products on feature sidewalls, while the TaN profiles were almost anisotropic, probably owing to the ion-enhanced etching that occurred.
ISSN:0042-207X
1879-2715
DOI:10.1016/j.vacuum.2005.11.017