Two-dimensional modelling of diffusion of low-energy implanted arsenic in silicon at rapid thermal annealing

The two-dimensional model of arsenic diffusion in silicon at rapid thermal annealing is presented. A method of solving the nonlinear differential equations system is specified. Model calculations were performed for 15 keV As + implanted in Si and annealed for 10 min at 950 °C. The results are in rea...

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Bibliographic Details
Published in:Vacuum 2007-06, Vol.81 (10), p.1184-1187
Main Authors: Komarov, F.F., Mironov, A.M., Zayats, G.M., Tsurko, V.A., Velichko, O.I., Komarov, A.F., Belous, A.I.
Format: Article
Language:English
Subjects:
Diffusion
Ion implantation
Point defects
Rapid thermal annealing
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Summary:The two-dimensional model of arsenic diffusion in silicon at rapid thermal annealing is presented. A method of solving the nonlinear differential equations system is specified. Model calculations were performed for 15 keV As + implanted in Si and annealed for 10 min at 950 °C. The results are in reasonable agreement with the experimental data, including the presence of local maximum of arsenic atoms near the surface.
ISSN:0042-207X
1879-2715
DOI:10.1016/j.vacuum.2007.01.012