Nb-Ti/Al/Ni/Au based ohmic contacts to AlGaN/GaN

In this paper, we report on a novel Nb-Ti/Al/Ni/Au metallic system proposed to form ohmic contact to AlGaN/GaN heterostructure. The metallic system uses deposition of thin niobium layer as the first layer in contact with the AlGaN barrier layer before deposition of the conventional Ti/Al/Ni/Au metal...

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Bibliographic Details
Published in:Vacuum 2007-10, Vol.82 (2), p.193-196
Main Authors: Vanko, G., Lalinský, T., Mozolová, Ž., Liday, J., Vogrinčič, P., Vincze, A., Uherek, F., Haščík, Š., Kostič, I.
Format: Article
Language:English
Subjects:
Contact resistivity
CTLM method
Depth profiling
Metal-nitride phases
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Summary:In this paper, we report on a novel Nb-Ti/Al/Ni/Au metallic system proposed to form ohmic contact to AlGaN/GaN heterostructure. The metallic system uses deposition of thin niobium layer as the first layer in contact with the AlGaN barrier layer before deposition of the conventional Ti/Al/Ni/Au metallic system. The fabrication and electrical characterization of the Nb-Ti/Al/Ni/Au based ohmic contacts are presented. We have shown that Nb-based ohmic contacts at optimal alloying temperatures seem to be superior to that of conventional Ti/Al/Ni/Au in both surface morphology and contact resistivity evaluation. Auger Electron Spectroscopy (AES) and Secondary Ion Mass Spectroscopy (SIMS) are also used to evaluate the improved ohmic contact formation.
ISSN:0042-207X
1879-2715
DOI:10.1016/j.vacuum.2007.07.020