Characterization of AlxGa1−xAs layers grown on (100) GaAs by metallic-arsenic-based-MOCVD

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Bibliographic Details
Published in:Vacuum 2010-05, Vol.84 (10), p.1182-1186
Main Authors: Díaz-Reyes, J., Galván-Arellano, M., Castillo-Ojeda, R.S., Peña-Sierra, R.
Format: Article
Language:English
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ISSN:0042-207X
DOI:10.1016/j.vacuum.2009.10.021