Development and test of 2.45 GHz microwave ion source based intense ion beam experimental facility

An intense low energy ion beam facility has been designed, developed at Inter University Accelerator Centre (IUAC), New Delhi. This facility comprises of a 2.45 GHz microwave ion source, multi-electrode extraction system and an experimental chamber. The facility was designed to perform experiments u...

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Bibliographic Details
Published in:Vacuum 2016-02, Vol.124, p.55-59
Main Authors: Kumar, Narender, Rodrigues, G., Mathur, Y., Ojha, S., Ahuja, R., Kanjilal, D.
Format: Article
Language:English
Subjects:
Ion implantation
Microwave ion source
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Summary:An intense low energy ion beam facility has been designed, developed at Inter University Accelerator Centre (IUAC), New Delhi. This facility comprises of a 2.45 GHz microwave ion source, multi-electrode extraction system and an experimental chamber. The facility was designed to perform experiments using intense ion beams having energy in range of a few keV to a few tens of keV. The plasma chamber was designed keeping two additional ports for plasma diagnostics. In order to deliver intense ion beams on the target with low electric field, a four-electrode extraction system has been developed. This facility has been used for 10 keV N+ & O+ ion implantation in silicon at varying doses. The implanted samples have been characterized by using Rutherford Back Scattering (RBS), RBS Channeling (RBS-C) and Nuclear Resonance Analysis (NRA). •An intense, low energy ion beam facility at IUAC.•Consists of microwave ion source, multi-electrode extraction system and experimental chamber.•Used for ion implantation.•Samples characterized by RBS, RBS-C and NRA.
ISSN:0042-207X
1879-2715
DOI:10.1016/j.vacuum.2015.11.014