The effect of Cu concentration in the photovoltaic efficiency of CIGS solar cells prepared by co-evaporation technique

Structural and electrical properties of polycrystalline CIGS thin films have been studied by changing the Cu/(In + Ga) ratio in the films. CIGS thin films with various Cu/(In + Ga) ratios are grown over Mo-coated soda-lime glass substrates using a co-evaporation technique. The Raman spectra provide...

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Bibliographic Details
Published in:Vacuum 2016-09, Vol.131, p.278-284
Main Authors: Sheu, Hung-Hua, Hsu, Yu-Tien, Jian, Shun-Yi, Liang, Shih-Chang
Format: Article
Language:English
Subjects:
Absorber layer
CIGS
Co-evaporation
Preferred orientation
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Summary:Structural and electrical properties of polycrystalline CIGS thin films have been studied by changing the Cu/(In + Ga) ratio in the films. CIGS thin films with various Cu/(In + Ga) ratios are grown over Mo-coated soda-lime glass substrates using a co-evaporation technique. The Raman spectra provide information about the existence of the order defect compound (ODC) at Cu-poor compositions (Cu/(In + Ga) ratio 
ISSN:0042-207X
1879-2715
DOI:10.1016/j.vacuum.2016.07.008