Gamma ray induced modifications in copper microwires synthesized using track-etched membrane

• Published in: Vacuum 2018-02, Vol.148, p.239-247
• Main Authors: Gupta, Rashi, Kumar, Rajesh, Chauhan, R.P., Chakarvarti, S.K.
• Format: Article
• Language: English
• Subjects: Electrical conductivity; Gamma radiation; Low dimensional; Scanning electron microscopy; Template synthesis; X-ray diffraction
• ISSN: 0042-207X; 1879-2715
• DOI: 10.1016/j.vacuum.2017.11.031

Low dimensional copper wires have gained a lot of interest in the field of device fabrication due to their interesting properties, low synthesis cost and many potential applications. In the present work, effects of γ-radiation exposure on physico-chemical and electrical properties of Cu microwires fabricated by electrochemical deposition in the track-etch membrane were studied. The synthesized Cu microwires were exposed using γ-radiation from a 60Co source at four different doses of 30, 80, 130 and 180 kGy respectively. The morphology of the pristine and γ-radiation exposed Cu microwires were characterized using Scanning Electron Microscopy. The X-ray diffraction spectra results confirmed the face centered cubic crystal structure for pristine and γ-radiation exposed microwires. Microwire crystallite size was determined using the Scherrer equation and found to increase from 39 to 50 nm with increase in gamma doses. The I-V measurements indicated that the resistance of the microwires increased with increasing gamma dose, suggesting that exposure to γ-radiation increases the reflection from the grain boundaries and induces defects and oxygen impurities in the wires that hinder the mobility of the electrons resulting into decrease in conductivity. [Display omitted] •Cu microwires were synthesized by template assisted electrodeposition.•Effect of gamma radiation exposure on Cu microwires was studied.•Crystal structure of Cu microwires remains intact upon irradiation upto 180 kGy.•Crystallite size and strain was determined by Scherrer method.•Scattering from grain boundaries and defects are responsible for decrease in conductivity.